Middle East and Africa SiC power semiconductor market is projected to register a CAGR of 17.4% in the forecast period of 2020 to 2027. The new market report contains data for historic year 2018, the base year of calculation is 2019 and the forecast period is 2020 to 2027.


Market Segmentation:

Middle East and Africa SiC Power Semicondutor Market By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), SiC Bare Die, Pin Diode, Junction FET (JFET), Bipolar Junction Transistor (BJT) and Others), Voltage Range (Less than 300V, 301-900V, 901-1700V, 1701V and Above), Application (Power Supplies, Electric Vehicles (EV), EV Charging Infrastructure, Industrial Motor Drives, Inverters, RF Devices and Others), Wafer Size (2 Inch, 4 Inch, 6 Inch and Above), Wafer Type (Blank SiC wafers and SiC Epitaxial Wafers), Vertical (Industrial, Commercial, Automotive, Consumer Electronics, Utilities & Energy, Aerospace & Defense, Medical, IT And Telecommunications and Others), Country (South Africa, Egypt, Saudi Arabia, U.A.E, Israel and Rest of Middle East and Africa) Industry Trends and Forecast to 2027

Some of the major factors contributing to the growth of the Middle East and Africa SiC power semiconductor market are:

- Increasing demand for SiC diodes in power electronics.

- Rising trend of industrialization in the gulf regions.


Market Players

Some of the major players operating in the Middle East and Africa SiC power semiconductor market are:

- Cree, Inc.
- Infineon Technologies AG
- Microsemi
- Mitsubishi Electric Corporation
- Toshiba Corporation
- Texas Instruments Incorporated
- NXP Semiconductors
- STMicroelectronics
- Renesas Electronics Corporation
- GE
- Littelfuse, Inc.
- SEMIKRON